KET Technology Centre of the European Union, FAU - Industrial Services in Crystal Growth of SiC

In December 2017 the successfull activities of Crystal Growth Lab have been listed by the European Union as a Key Enabling Technology (KET) Centre on "FAU - Industrial Services in Crystal Growth of SiC".

The research activities in the crystal growth lab of Prof. Dr.-Ing. Peter Wellmann at the electronic materials and energy technology (i-meet) division of the materials department (University of Erlangen-Nuremberg) are devoted to modern topics in semiconductor technology and include crystal growth, epitaxy and characterization of various electronic materials.

In the focus of R&D are Materials for Power Electronics & Energy Saving:

(i) Silicon carbide for power electronic devices is a key player for energy saving.

(ii) The CIGSSe thin film solar cell materials recently have reached a maturity that allows the realization of commercial solar panels. CZTSSe is believed to play the role of a succeeding thin film solar cell material.

(iii) Printed electronic layers offer a great potential of a wide range of (opto-)electronic and photovoltaic device applications.

(iv) In the field of characterization a large variety of electrical, spectroscopic and structural techniques are used which serve the better understanding of materials processing. Special emphasis is put on topographic methods.

(v) In all fields service for industrial and institutional partners may be provided.


  • open access - P.J. Wellmann, Power electronic semiconductor materials for automotive and energy saving applications - SiC, GaN, Ga2O3 and Diamond, Z. Anorg. Allg. Chem. 2017, 643, 1312–1322, doi/10.1002/zaac.201700270
  • P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P. J. Wellmann, Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers, J. Crystal Growth 478 (2017), p.159-162, doi.org/10.1016/j.jcrysgro.2017.09.002
  • open access - F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann, From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction, Materials Science in Semiconductor Processing 78 (2018) 57–68, doi.org/10.1016/j.mssp.2017.12.012
  • S. Schimmel, M. Koch, P. Macher, A.-C.L. Kimmel, T.G. Steigerwald, N.S.A. Alt, E. Schlücker, P. Wellmann, Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers, J. Cryst. Growth, 479, p. 59-66 (2017), doi.org/10.1016/j.jcrysgro.2017.09.027
  • BOOK: Peter Wellmann - Materialien der Elektronik und Energietechnik - Halbleiter, Graphen, Funktionale Materialien (Springer, 2016), ISBN 987-3-658-14005-2, ISBN 978-3-658-14006-9 (eBook), DOI 10.1007/978-3-658-14006-9